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| 2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (F-MOSIII) 2SK2613 Switching Regulator Applications, DC-DC Converter and Motor Drive Applications * * * * Low drain-source ON resistance: RDS (ON) = 1.4 (typ.) High forward transfer admittance: iYfsi = 6.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 800 V) Enhancement-model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 1000 1000 30 8 24 150 910 8 15 150 -55~150 Unit V V V A W mJ A mJ C C 1. GATE 2. DRAIN (HEAT SINK) 3. SOURSE Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA 2-16C1B Weight: 4.6 g (typ.) Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 0.833 50 Unit C/W C/W Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: VDD = 90 V, Tch = 25C, L = 26.3 mH, RG = 25 W, IAR = 8 A Note 3: Repetitive rating: Pulse width limited by max junction temperature This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-08-09 2SK2613 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) iYfsi Ciss Crss Coss tr ton tf VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 30 V, VDS = 0 V IG = 10 mA, VDS = 0 V VDS = 800 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 4 A VDS = 20 V, ID = 4 A Min 3/4 30 3/4 1000 2.0 3/4 2.0 3/4 3/4 Typ. 3/4 3/4 3/4 3/4 3/4 1.4 6.0 2000 30 200 20 Max 10 3/4 100 3/4 4.0 1.7 3/4 3/4 3/4 pF Unit mA V mA V V W S 3/4 10 V VGS 0V 4.7 9 ID = 4 A 3/4 3/4 3/4 ns 3/4 VOUT Turn-ON time Switching time Fall time 3/4 RL = 100 W 40 3/4 VDD ~ 400 V 3/4 30 3/4 3/4 3/4 3/4 3/4 nC Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge toff Duty < 1%, tw = 10 ms = 100 Qg Qgs Qgd VDD ~ 400 V, VGS = 10 V, ID = 8 A - 3/4 3/4 3/4 65 40 25 Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition 3/4 3/4 IDR = 8 A, VGS = 0 V IDR = 8 A, VGS = 0 V, dIDR/dt = 100 A/ms Min 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 1600 24 Max 8 24 -1.9 3/4 3/4 Unit A A V ms mC Marking K2613 Lot Number Type Month (starting from alphabet A) Year (last number of the christian era) 2 2002-08-09 2SK2613 ID - VDS 10 Common source Tc = 25C Pulse test 20 15 10 6.0 5.75 16 Common source Tc = 25C Pulse test ID - VDS 15 10 6.5 8 (A) (A) 6.25 12 6.0 5.75 5.5 4 5.25 VGS = 5.0 V ID 6 Drain current 4 5.25 5.0 Drain current ID 5.5 8 2 VGS = 4.75 V 0 0 4 8 12 16 20 0 0 20 40 60 80 100 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 20 Common source VSD = 20 V Pulse test 20 VDS - VGS Common source Tc = 25C Pulse test 16 (V) VDS 16 (A) ID 12 12 ID = 8 A 8 Drain-source voltage Drain current 25 8 4 4 2 0 4 100 0 Tc = -55C 0 2 4 6 8 10 0 4 8 12 16 20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) iYfsi - ID 100 Common source VSD = 20 V Pulse test 10 (S) RDS (ON) - ID Common source Tc = 25C Pulse test iYfsi Drain-source on resistance RDS (ON) (9) Forward transfer admittance 10 25 Tc = -55C 100 1 5 3 1 0.5 0.3 VGS = 10,15 0.1 0.1 1 10 100 0.1 0.1 0.3 1 3 10 30 Drain current ID (A) Drain current ID (A) 3 2002-08-09 2SK2613 RDS (ON) - Tc 5 Common source VGS = 10 V Pulse test 100 IDR - VDS RDS (ON) (W) 4 (A) Drain reverse current IDR 10 Drain-source on resistance 3 1 2 ID = 8 A 2 4 0.1 10 3 1 VGS = 0, -1 V -0.6 -0.8 -1.0 -1.2 1 0 -80 -40 0 40 80 160 0 0 -0.2 -0.4 Case temperature Tc (C) Drain-source voltage VDS (V) Capacitance - VDS 10000 5 Vth - Tc Common source VDS = 10 V ID = 1 mA Pulse test Gate threshold voltage Vth (V) Ciss 4 (pF) 1000 Capacitance C 3 Coss 100 Common source VGS = 0 V f = 1 MHz Tc = 25C 10 0.1 1 10 2 Crss 1 100 1000 Drain-source voltage VDS (V) 0 -80 -40 0 40 80 120 160 Case temperature Tc (C) PD - Tc 200 500 Dynamic input/output characteristics Common source ID = 8 A Tc = 25C Pulse test 20 (W) (V) 160 400 16 PD VDS Drain power dissipation Drain-source voltage VDS 200 400 VGS 100 200 8 80 40 4 0 0 40 80 120 160 200 0 0 20 40 60 80 0 100 Case temperature Tc (C) Total gate charge Qg (nC) 4 2002-08-09 Gate-source voltage 120 300 VDS = 100 V 12 VGS (V) 2SK2613 rth - tw 10 Normalized transient thermal impedance rth (t)/Rth (ch-a) 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single pulse PDM t T Duty = t/T Rth (ch-c) = 0.833C/W 0.01 0.001 10 m 100 m 1m 10 m 100 m 1 10 Pulse width tw (S) Safe operating area 100 50 30 ID max (pulsed) * 10 ID max (continuous) 100 ms * 1 ms * DC Operation Tc = 25C 1000 EAS - Tch (mJ) Avalanche energy EAS 800 (A) Drain current ID 5 3 1 0.5 0.3 0.1 600 400 200 * Single nonrepetitive pulse 0.05 Tc = 25C 0.03 Curves must be derated linearly 0.01 1 with increase in temperature. 3 10 30 100 300 VDSS max 1000 3000 10000 0 25 50 75 100 125 150 Channel temperature (initial) Tch (C) Drain-source voltage VDS (V) 15 V -15 V BVDSS IAR VDD VDS Test circuit RG = 25 W VDD = 90 V, L = 26.3 mH AS = Wave form ae o 1 B VDSS / x L x I2 x c cB / 2 VDSS - VDD o e 5 2002-08-09 2SK2613 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 6 2002-08-09 |
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